K4A4G165WD-BCTD vs K4A4G165WE-BCTD Comparison
Detailed side-by-side comparison of K4A4G165WD-BCTD by Samsung Electronics and K4A4G165WE-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ ActiveSamsung Electronics
K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
K4A4G165WE-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A4G165WD-BCTD | K4A4G165WE-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $19.00 | $11.38 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 4 Gbit | — |
| Organization | 256M x 16 | — |
| Data Rate | 2666 Mbps/pin (-BCTD speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Core Supply (VPP) | 2.5 V | — |
| Interface | SSTL-12 | Parallel, x16 |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| Package | 96-ball FBGA | FBGA-96 (TFBGA) |
| Mounting Type | Surface Mount (BGA) | Surface Mount |
| Operating Temperature | 0C to +85C (commercial) | 0C to +85C |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes (external RZQ resistor) | — |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Memory Size | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| Die Generation | — | E-die |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Product Status | — | Active |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | — | BL8 (JEDEC DDR4) |
| Bank Group Architecture | — | Yes (DDR4) |