K4A4G165WE-BCTD vs K4A4G165WD-BCTD Comparison
Detailed side-by-side comparison of K4A4G165WE-BCTD by Samsung Electronics and K4A4G165WD-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
K4A4G165WE-BCTD ✓ ActiveSamsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A4G165WE-BCTD | K4A4G165WD-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.38 | $19.00 |
| Memory Type | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Memory Size | 4 Gbit | — |
| Memory Organization | 256M x 16 | — |
| Interface | Parallel, x16 | SSTL-12 |
| Supply Voltage (VDD) | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Die Generation | E-die | — |
| Package | FBGA-96 (TFBGA) | 96-ball FBGA |
| Terminal Count | 96 | — |
| Operating Temperature | 0C to +85C | 0C to +85C (commercial) |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Speed Grade | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] | — |
| RoHS Status | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Product Status | Active | — |
| Datasheet Revision | K4A4G165WE Rev. 1.4, Jun. 2016 | — |
| Burst Length | BL8 (JEDEC DDR4) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Density | — | 4 Gbit |
| Organization | — | 256M x 16 |
| Data Rate | — | 2666 Mbps/pin (-BCTD speed grade) |
| Core Supply (VPP) | — | 2.5 V |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes (external RZQ resistor) |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |