K4A8G045WB-BCRC vs K4A8G045WB Comparison

Detailed side-by-side comparison of K4A8G045WB-BCRC by Samsung Electronics and K4A8G045WB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Active
Samsung Electronics
K4A8G045WB K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB ✓ Active

Specification Comparison

Parameter K4A8G045WB-BCRC K4A8G045WB
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.95 $9.27
Memory Type DDR4 SDRAM DDR4 SDRAM (B-die)
Density 8 Gb 8 Gb
Organization 2G x 4 2G x 4
Speed 2400 Mbps —
Supply Voltage (VDD/VDDQ) 1.2 V —
Process Technology Samsung B-die —
Interface CMOS, differential clock (CK/CK#) —
Refresh Cycles 8192 8192
Maximum Supply Current 211.7 mA —
Operating Temperature 0 C to 85 C 0 C to +85 C
Package 78-ball FBGA (PBGA78) 78-ball FBGA
Terminals 78 —
Mounting Type Surface Mount Surface Mount
Key DDR4 Features Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset —
DLL Mode Timing specified for DLL-enabled operation —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Data Rate — 2133 Mbps
Supply Voltage — 1.2 V
Max Supply Current — 211.7 mA
Number of Terminals — 78
Clocking — Differential clock (CK / CK#)
On-Die Termination — Yes (ODT pin)
Asynchronous Reset — Yes
Posted CAS — Yes
Programmable CWL — Yes
Internal (Self) Calibration — Yes

Datasheets & Resources

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