K4A8G045WB vs K4A8G045WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G045WB by Samsung Electronics and K4A8G045WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung
K4A8G045WB-BCPB ✓ ActiveSpecification Comparison
| Parameter | K4A8G045WB | K4A8G045WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.27 | $9.02 |
| Memory Type | DDR4 SDRAM (B-die) | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gb |
| Organization | 2G x 4 | 2G x 4 |
| Data Rate | 2133 Mbps | 2133 Mbps/pin (PC4-2133) |
| Supply Voltage | 1.2 V | — |
| Max Supply Current | 211.7 mA | 211.7 mA |
| Operating Temperature | 0 C to +85 C | 0C to +85C |
| Package | 78-ball FBGA | 78-ball FBGA |
| Refresh Cycles | 8192 | 8192 |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Terminals | 78 | — |
| Clocking | Differential clock (CK / CK#) | Differential clocks (CK/CK#) |
| On-Die Termination | Yes (ODT pin) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Programmable CWL | Yes | — |
| Internal (Self) Calibration | Yes | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Supply Voltage (VDD) | — | 1.2 V |
| Prefetch Architecture | — | 8n |
| Burst Length | — | BL8, BC4 (burst chop) |
| Refresh Modes | — | Auto-refresh, Self-refresh |
| Termination | — | On-Die Termination (ODT) |
| Reset | — | Asynchronous Reset |
| Features | — | Posted CAS, Programmable CWL, Internal (Self) Calibration |