K4A8G085WB-BCRC vs K4A8G045WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G085WB-BCRC by Samsung Electronics and K4A8G045WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ ActiveSamsung Electronics
K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
K4A8G045WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WB-BCRC | K4A8G045WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 2G x 4 |
| Data Rate | 2400 Mbps | — |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0°C to 85°C | 0 C to 85 C |
| Package | 78-ball FBGA | 78-ball FBGA (PBGA78) |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | 8192 |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Speed | — | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V |
| Process Technology | — | Samsung B-die |
| Interface | — | CMOS, differential clock (CK/CK#) |
| Maximum Supply Current | — | 211.7 mA |
| Terminals | — | 78 |
| Mounting Type | — | Surface Mount |
| Key DDR4 Features | — | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset |
| DLL Mode | — | Timing specified for DLL-enabled operation |
| RoHS Status | — | Compliant |