K4A8G085WB-BCRC vs K4A8G045WB-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BCRC disebabkan oleh Samsung Electronics dan K4A8G045WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ AktifSamsung Electronics
K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
K4A8G045WB-BCRC ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WB-BCRC | K4A8G045WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 2G x 4 |
| Kadar Data | 2400 Mbps | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | 0°C to 85°C | 0 C to 85 C |
| Kemasan | 78-ball FBGA | 78-ball FBGA (PBGA78) |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | 8192 |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Speed | — | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V |
| Process Technology | — | Samsung B-die |
| Antaramuka | — | CMOS, differential clock (CK/CK#) |
| Maximum Supply Current | — | 211.7 mA |
| Terminals | — | 78 |
| Jenis Pemasangan | — | Surface Mount |
| Key DDR4 Features | — | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset |
| DLL Mode | — | Timing specified for DLL-enabled operation |
| Status RoHS | — | Compliant |