K4A8G085WB-BCTD vs K4A8G085WC-BCPB Comparison
Detailed side-by-side comparison of K4A8G085WB-BCTD by Samsung Electronics and K4A8G085WC-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
K4A8G085WB-BCTD ✓ ActiveSamsung Electronics
K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
K4A8G085WC-BCPB ✗ End of LifeSpecification Comparison
| Parameter | K4A8G085WB-BCTD | K4A8G085WC-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $2.95 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb (1G x 8) | — |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 3200 Mbps (PC4-25600) | 2133 Mbps |
| Speed Bin | CL22-22-22 | — |
| Package | FBGA-78 (TFBGA) | 78FBGA |
| Operating Temperature | 0°C to +95°C (TC) | 0 C to +85 C |
| Burst Length | 8 (BL8) | — |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask Function | Yes | — |
| JESD-30 Code | R-PBGA-B78 | — |
| Number of Terminals | 78 | 78 |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gb |
| Organization | — | 1G x 8 |
| Maximum Seated Height | — | 1.2 mm |
| Mounting Type | — | Surface Mount |
| Speed Grade | — | DDR4-2133 |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| CAS Latency | — | [DATA_NEEDED: CAS latency] |
| Die Revision | — | [DATA_NEEDED: die revision] |
| Standard Package Quantity | — | [DATA_NEEDED: standard package quantity] |