K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
MPN: K4A8G085WC-BCPB ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.1 | $4.10 |
| 10 | $3.8 | $38.00 |
| 100 | $3.45 | $345.00 |
| 500 | $3.2 | $1,600.00 |
| 1,000 | $2.95 | $2,950.00 |
Drop-in alternatives for K4A8G085WC-BCPB — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G085WC-BCRC
✅ Drop-In✓ In Stock
$4.3 / Unit
View Datasheet →K4A8G085WC-BCTD
✅ Drop-In✓ In Stock
$50.85 / Unit
View Datasheet →K4A8G085WC-BIWE
✅ Drop-In✓ In Stock
$6.29 / Unit
View Datasheet →K4A8G085WB-BCPB
✅ Drop-In✓ In Stock
$3.28 / Unit
View Datasheet →K4A8G085WB-BCTD
✅ Drop-In✓ In Stock
$7.5 / Unit
View Datasheet →K4A8G085WC-BCPB Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 1G x 8 |
| Data Rate | 2133 Mbps |
| Supply Voltage | 1.2 V |
| Operating Temperature | 0 C to +85 C |
| Package | 78FBGA |
| Number of Terminals | 78 |
| Maximum Seated Height | 1.2 mm |
| Mounting Type | Surface Mount |
| Speed Grade | DDR4-2133 |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
K4A8G085WC-BCPB [data_needed: standard package quantity] Pin Configuration Guide
Complete pinout information for K4A8G085WC-BCPB ([data_needed: standard package quantity] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: standard package quantity] package pinout diagram for K4A8G085WC-BCPB](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K4A8G085WC-BCPB.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G085WC-BCPB is suitable for 6 applications: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Test and Measurement Instruments, Replacement Sourcing and BOM Repair, FPGA Memory Attach.
Industrial Controllers
Industrial PLCs and motion controllers need dependable working memory with long sourcing lifetimes. The K4A8G085WC-BCPB provides 8 Gb of DDR4-2133 bandwidth (1G x 8) at 1.2 V, giving roughly 1 GB of main memory per device in a compact 78FBGA footprint. Its x8 organization simplifies byte-lane routing to industrial CPU modules, and features such as dynamic ODT and ZQ calibration hold signal integrity on longer, noisier board traces typical of factory automation hardware. Placed on a fly-by address bus with VTT termination and a 1.2 V rail, it delivers reliable DDR4-2133 operation; since the part is EOL, design teams should pair new controller boards with the documented WB-family drop-ins to protect future sourcing.
Recommended
Embedded Computing Modules
COM Express, SMARC, and custom SOMs attach one or two DDR4 x8 DRAMs per byte lane. The K4A8G085WC-BCPB's 1G x 8 organization and 78FBGA package fit the dense memory islands of carrier-bound modules, while its 2133 Mbps rate matches standard SoC memory-controller speed bins. The 1.2 V supply aligns with module power budgets, and CRC plus data-mask functions simplify error-managed configurations in edge servers. Designers mount the device on length-matched 8-layer stacks and rely on controller read/write training to close timing at 2133 Mbps. Because the part is EOL, module vendors should qualify the K4A8G085WB-BCPB pin-compatible variant to keep the same PCB assembly across future builds.
Recommended
Networking Equipment
Line cards, switch control planes, and small-cell processors use DDR4 for packet buffers and control-plane working memory. The K4A8G085WC-BCPB offers 8 Gb at DDR4-2133 with a 1.2 V rail, suiting merchant silicon reference designs that specify DDR4-2133 x8 UDIMM-equivalent components. Dynamic on-die termination and ZQ calibration keep the 2133 Mbps eye within mask across backplane-length trace runs, and asynchronous reset allows clean reinitialization after watchdog events. Engineers populate one device per x8 lane and validate with full memory stress tests. With EOL status confirmed, network OEMs should last-time-buy or move to the documented -BCRC/-BCTD drop-ins after timing re-validation.
Recommended
Test and Measurement Instruments
Oscilloscopes, arbitrary waveform generators, and protocol analyzers stream deep capture data into DDR4. The K4A8G085WC-BCPB's 1 GB capacity and 2133 Mbps throughput per device give instrument FPGA front ends sufficient buffering bandwidth when banks are interleaved, while the x8 organization lets designers scale memory width one byte lane at a time. ZQ calibration maintains termination accuracy across the instrument's thermal envelope (0 to +85 C), and CRC-supported configurations raise data-capture confidence. Layout teams reference-plane-guard the memory fly-by bus to protect timing margin. Since this Samsung die is EOL, instrument makers should re-qualify the WB-family equivalents to preserve long-term serviceability of shipped products.
Recommended
Replacement Sourcing and BOM Repair
Many deployed industrial and networking platforms were built on DDR4-2133 x8 DRAM and now face component obsolescence. The K4A8G085WC-BCPB serves repair depots and contract manufacturers replacing failed DRAM on legacy boards: matching the original 8Gb, 1G x 8, 78FBGA, 1.2 V configuration restores the board to spec without PCB or firmware changes. Buyer-side diligence should confirm date codes, verify 2133 speed-bin compliance with the board's SPD/controller table, and run full memory diagnostics after reflow. Stock reports indicate roughly 13,000 units remain across brokers, so long-term service programs should transition to the pin-compatible WB family documented here.
Recommended
FPGA Memory Attach
Xilinx MIG and Intel EMIF controllers readily drive single-rank DDR4-2133 x8 devices, making the K4A8G085WC-BCPB a straightforward FPGA memory attach choice. One 78FBGA device occupies one chip-select with byte-wide DQ, keeping FPGA bank assignment simple; 8 Gb capacity suits video frame buffers, data acquisition FIFOs, and coprocessor workspaces. The 1.2 V VDDQ domain matches FPGA HR bank standards through proper level-compliant termination, and controller calibration (write leveling, read training) closes timing at 2133 Mbps on 8-layer boards. Designers should mirror the ballout in constraint files precisely and re-run training whenever substituting the EOL part with a WB or BCRC alternative.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G085WC-BCPB — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G085WC-BCRC | K4A8G085WC-BCTD | K4A8G085WC-BIWE | K4A8G085WB-BCPB |
|---|---|---|---|---|---|
| Package | 78FBGA | 78FBGA - same | 78FBGA - same | 78FBGA - same | 78FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 2133 Mbps | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 2133 Mbps class |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0 C to +85 C | 0 C to +85 C | 0 C to +95 C | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | EOL | Active/broker stock | EOL (migration to BIWE documented) | Active (designated migration part) | Active/broker stock |
Key Differentiators
- Lowest-cost DDR4-2133 speed bin in the 8Gb x8 family (vs K4A8G085WC-BCRC)
- Long-term sourcing continuity via pin-compatible B-die generation (vs K4A8G085WB-BCPB)
- Official Samsung-sanctioned migration target exists (vs K4A8G085WC-BCTD)
Design Notes
Route the DDR4-2133 interface with a fly-by command/address topology terminated to VTT, and length-match data groups per byte lane to within typical DDR4 board-level tolerances. Keep DQ/DQS stubs minimal, reference an unbroken ground plane under all memory traces, and use 40-ohm single-ended impedance. Samsung's DDR4 design guide and your memory controller vendor's layout checklist define exact length-matching windows; following both prevents 2130-2133 Mbps eye failures on 8-layer stacks.
Supply a tight 1.2 V rail (typically +/-3%) to VDD and VDDQ with local 0.1 uF decoupling per power ball group plus bulk capacitance near the 78FBGA. Plan for a DDR termination regulator (VTT/VTTREF) on the command/address bus per the JEDEC DDR4 architecture. Estimated: dynamic power scales with data rate, so at 2133 Mbps a single 8Gb device draws on the order of hundreds of milliamps from the 1.2 V rail under sustained traffic - size the VRM with margin for refresh bursts.
The -BCPB suffix encodes the speed bin, package style, and temperature code; do not assume interchangeability purely from the K4A8G085WC prefix. Substituting a -BCRC or -BCTD is electrically pin-compatible but changes AC timing and operating range, so update the controller's SPD/timing table and re-run memory training and full stress tests after any swap. Also confirm that EOL broker stock has verifiable date codes before accepting quantity shipments.
Compliance Information
Compliance data not stated in provided sources. Samsung DDR4 products are generally RoHS compliant, but this must be confirmed against the official Samsung product page before inclusion in compliance-sensitive BOMs.
