K4A8G085WB-BICH vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WB-BICH by Samsung Electronics and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BICH
K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung
K4A8G085WB-BICH β ActiveSamsung Electronics
K4A8G085WC-BIWE
K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung
K4A8G085WC-BIWE β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BICH | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.96 | $6.29 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2V | β |
| Data Rate | 2400 Mbps (DDR4-2400) | 3200 Mbps |
| Package | 78-ball FBGA | 78-FBGA |
| Operating Temperature | 0Β°C to 85Β°C | β |
| Max Supply Current | 170mA | β |
| Burst Length | BL8, BL16 | 8 (BL8), 4 (BC4) |
| CAS Latency | Programmable | 22 (CL22) |
| On-Die ECC | Yes | β |
| Data Bus Inversion | Yes | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | Yes |
| Die Revision | B-die | β |
| Supply Voltage (VDD) | β | 1.2 V |
| Supply Voltage (VDDQ) | β | 1.2 V |
| Operating Temperature Range | β | -40Β°C to +95Β°C |
| Mounting Type | β | Surface Mount |
| Interface | β | POD-12 |
| Refresh | β | Auto-refresh, self-refresh |
| RoHS Status | β | Compliant |