K4A8G085WB-BICH vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WB-BICH by Samsung Electronics and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BICH | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2V | — |
| Data Rate | 2400 Mbps (DDR4-2400) | 3200 Mbps |
| Package | 78-ball FBGA | 78-FBGA |
| Operating Temperature | 0°C to 85°C | — |
| Max Supply Current | 170mA | — |
| Burst Length | BL8, BL16 | 8 (BL8), 4 (BC4) |
| CAS Latency | Programmable | 22 (CL22) |
| On-Die ECC | Yes | — |
| Data Bus Inversion | Yes | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Die Revision | B-die | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Operating Temperature Range | — | -40°C to +95°C |
| Mounting Type | — | Surface Mount |
| Interface | — | POD-12 |
| Refresh | — | Auto-refresh, self-refresh |
| RoHS Status | — | Compliant |