K4A8G085WB-BITD vs K4A8G085WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G085WB-BITD by Samsung Electronics and K4A8G085WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WB-BITD | K4A8G085WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2666 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | -40°C to +95°C | 0°C to 85°C |
| Package | 78FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | — |
| Number of Pins | 78 | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| Interface | Parallel | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Access Time | — | 0.175 ns |
| Technology | — | CMOS |
| Burst Length | — | 8 and 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| RoHS | — | Compliant |