K4A8G085WC-BCPB vs K4A8G085WB-BCPB Comparison

Detailed side-by-side comparison of K4A8G085WC-BCPB by Samsung Electronics and K4A8G085WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WC-BCPB K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB ✗ End of Life
Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB ✓ Active

Specification Comparison

Parameter K4A8G085WC-BCPB K4A8G085WB-BCPB
Brand Samsung Electronics Samsung Electronics
Category DRAM Memory ICs
Lifecycle Status End of Life Active
Stock Status In Stock In Stock
Unit Price (USD) $2.95 $13.78
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gbit
Organization 1G x 8 1G x 8
Data Rate 2133 Mbps 3200 Mbps (PC4-25600)
Supply Voltage 1.2 V 1.2 V (nominal)
Operating Temperature 0 C to +85 C —
Package 78FBGA 78-ball FBGA
Number of Terminals 78 —
Maximum Seated Height 1.2 mm —
Mounting Type Surface Mount Surface Mount (BGA)
Speed Grade DDR4-2133 BC
Features Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask —
Refresh [DATA_NEEDED: refresh rate 1x/2x] —
CAS Latency [DATA_NEEDED: CAS latency] —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Die Revision [DATA_NEEDED: die revision] —
Standard Package Quantity [DATA_NEEDED: standard package quantity] —
CAS Latency (CL) — 22
Burst Length — 8
Bank Architecture — 16 banks (4 bank groups)
Refresh Interval — 7.8 us (up to 85C)
Interface Type — SSTL-12
Termination — ODT / dynamic ODT
Self-Refresh — Temperature-Compensated Self-Refresh (TCSR)
Package Dimensions — 11 mm x 11 mm
Operating Mode — DLL enabled

Datasheets & Resources

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