K4A8G085WC-BCPB vs K4A8G085WB-BCTD Comparison
Detailed side-by-side comparison of K4A8G085WC-BCPB by Samsung Electronics and K4A8G085WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
K4A8G085WC-BCPB ✗ End of LifeSamsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
K4A8G085WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WC-BCPB | K4A8G085WB-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | End of Life | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $7.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 1G x 8 | — |
| Data Rate | 2133 Mbps | 3200 Mbps (PC4-25600) |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0 C to +85 C | 0°C to +95°C (TC) |
| Package | 78FBGA | FBGA-78 (TFBGA) |
| Number of Terminals | 78 | 78 |
| Maximum Seated Height | 1.2 mm | — |
| Mounting Type | Surface Mount | — |
| Speed Grade | DDR4-2133 | — |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | — |
| CAS Latency | [DATA_NEEDED: CAS latency] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Die Revision | [DATA_NEEDED: die revision] | — |
| Standard Package Quantity | [DATA_NEEDED: standard package quantity] | — |
| Memory Size | — | 8 Gb (1G x 8) |
| Speed Bin | — | CL22-22-22 |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask Function | — | Yes |
| JESD-30 Code | — | R-PBGA-B78 |