K4A8G085WC-BCPB vs K4A8G085WC-BCTD Comparison

Detailed side-by-side comparison of K4A8G085WC-BCPB by Samsung Electronics and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WC-BCPB K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB ✗ End of Life
Samsung Electronics
K4A8G085WC-BCTD K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Last Time Buy

Specification Comparison

Parameter K4A8G085WC-BCPB K4A8G085WC-BCTD
Brand Samsung Electronics Samsung Electronics
Category DRAM Memory ICs
Lifecycle Status End of Life Last Time Buy
Stock Status In Stock In Stock
Unit Price (USD) $2.95 $50.85
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 1G x 8 1G x 8
Data Rate 2133 Mbps 2666 Mbps (PC4-2133)
Supply Voltage 1.2 V —
Operating Temperature 0 C to +85 C 0C to +95C
Package 78FBGA 78-ball FBGA (78FBGA)
Number of Terminals 78 —
Maximum Seated Height 1.2 mm —
Mounting Type Surface Mount Surface Mount
Speed Grade DDR4-2133 —
Features Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask —
Refresh [DATA_NEEDED: refresh rate 1x/2x] —
CAS Latency [DATA_NEEDED: CAS latency] —
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Die Revision [DATA_NEEDED: die revision] —
Standard Package Quantity [DATA_NEEDED: standard package quantity] —
Supply Voltage (VDD/VDDQ) — 1.2 V (1.14 V to 1.26 V)
Ball Pitch — 0.8 mm
Standard Operating Temp Range — 0C to +85C
Burst Length — 8 (chop 4)
Auto Precharge — Yes
Asynchronous Reset — Yes
CRC Function — Yes
ZQ Calibration — Yes
Dynamic ODT — Yes
Data Mask — Yes
Interface Type — Synchronous, parallel

Datasheets & Resources

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