K4A8G085WC-BCPB vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WC-BCPB by Samsung Electronics and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
K4A8G085WC-BCPB ✗ End of Life
Specification Comparison
| Parameter | K4A8G085WC-BCPB | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | End of Life | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $6.29 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2133 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0 C to +85 C | — |
| Package | 78FBGA | 78-FBGA |
| Number of Terminals | 78 | — |
| Maximum Seated Height | 1.2 mm | — |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Grade | DDR4-2133 | — |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | Auto-refresh, self-refresh |
| CAS Latency | [DATA_NEEDED: CAS latency] | 22 (CL22) |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Die Revision | [DATA_NEEDED: die revision] | — |
| Standard Package Quantity | [DATA_NEEDED: standard package quantity] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Operating Temperature Range | — | -40°C to +95°C |
| Interface | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Lead-Free | — | Yes |