K4A8G085WC-BCRC vs H5AN4G8NBJR-UHC Comparison
Detailed side-by-side comparison of K4A8G085WC-BCRC by Samsung Electronics and H5AN4G8NBJR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BCRC | H5AN4G8NBJR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.30 | $3.18 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 4 Gbit |
| Organization | 1G x 8 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 2400 Mbps (DDR4-2400) | 2400 Mbps (PC2400) |
| Package | 78-ball FBGA (TFBGA) | TFBGA-78 (11 x 7.5 mm) |
| Terminal Pitch | 0.8 mm | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| RoHS Status | Compliant | Compliant (Rohs Code: Yes) |
| Refresh | Auto/Self refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] |
| Interface | — | DDR4 (JEDEC) |
| Technology | — | CMOS DRAM |
| Lifecycle Code | — | Active |
| REACH Compliance | — | Compliant |
| Manufacturer | — | SK Hynix Inc. |
| CAS Latency | — | [DATA_NEEDED: CAS latency for -UHC speed bin] |