K4A8G085WC-BCRC vs H5AN4G8NBJR-UHC 对比

详细并排对比 K4A8G085WC-BCRC 出自 Samsung Electronics 和 H5AN4G8NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4A8G085WC-BCRC K4A8G085WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

K4A8G085WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

K4A8G085WC-BCRC ✓ 量产中
SK hynix
H5AN4G8NBJR-UHC H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC ✓ 量产中

规格对比

参数 K4A8G085WC-BCRC H5AN4G8NBJR-UHC
品牌 Samsung Electronics SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.30 $3.18
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 4 Gbit
存储组织 1G x 8 512M x 8
电源电压 1.2 V 1.2 V
数据速率 2400 Mbps (DDR4-2400) 2400 Mbps (PC2400)
封装 78-ball FBGA (TFBGA) TFBGA-78 (11 x 7.5 mm)
Terminal Pitch 0.8 mm —
安装类型 Surface Mount Surface Mount
工作温度 0C to +95C [DATA_NEEDED: operating temperature range]
Auto Precharge Yes —
Asynchronous Reset Yes —
CRC Function Yes —
ZQ Calibration Yes —
Dynamic On-Die Termination Yes —
Data Mask Function Yes —
RoHS 状态 Compliant Compliant (Rohs Code: Yes)
Refresh Auto/Self refresh [DATA_NEEDED: refresh rate 1x/2x/4x support]
接口 — DDR4 (JEDEC)
Technology — CMOS DRAM
Lifecycle Code — Active
REACH Compliance — Compliant
Manufacturer — SK Hynix Inc.
CAS 延迟 — [DATA_NEEDED: CAS latency for -UHC speed bin]

数据手册与资源

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