K4A8G085WC-BCRC vs H5AN8G8NAFR-RDC Comparison
Detailed side-by-side comparison of K4A8G085WC-BCRC by Samsung Electronics and H5AN8G8NAFR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BCRC | H5AN8G8NAFR-RDC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.30 | $2.95 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 (x8) |
| Supply Voltage | 1.2 V | — |
| Data Rate | 2400 Mbps (DDR4-2400) | 2666 MT/s (per -R speed grade suffix) |
| Package | 78-ball FBGA (TFBGA) | 78-ball FBGA |
| Terminal Pitch | 0.8 mm | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: Operating Temperature range] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| RoHS Status | Compliant | Compliant |
| Refresh | Auto/Self refresh | — |
| Interface | — | DDR4 (Double Data Rate 4) |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |