K4A8G085WC-BCTD vs K4A8G085WC-BCPB Comparison

Detailed side-by-side comparison of K4A8G085WC-BCTD by Samsung Electronics and K4A8G085WC-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WC-BCTD K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Last Time Buy
Samsung Electronics
K4A8G085WC-BCPB K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB ✗ End of Life

Specification Comparison

Parameter K4A8G085WC-BCTD K4A8G085WC-BCPB
Brand Samsung Electronics Samsung Electronics
Category Memory ICs DRAM
Lifecycle Status Last Time Buy End of Life
Stock Status In Stock In Stock
Unit Price (USD) $50.85 $2.95
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 1G x 8 1G x 8
Data Rate 2666 Mbps (PC4-2133) 2133 Mbps
Supply Voltage (VDD/VDDQ) 1.2 V (1.14 V to 1.26 V) —
Package 78-ball FBGA (78FBGA) 78FBGA
Ball Pitch 0.8 mm —
Operating Temperature 0C to +95C 0 C to +85 C
Standard Operating Temp Range 0C to +85C —
Burst Length 8 (chop 4) —
Auto Precharge Yes —
Asynchronous Reset Yes —
CRC Function Yes —
ZQ Calibration Yes —
Dynamic ODT Yes —
Data Mask Yes —
Interface Type Synchronous, parallel —
Mounting Type Surface Mount Surface Mount
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Supply Voltage — 1.2 V
Number of Terminals — 78
Maximum Seated Height — 1.2 mm
Speed Grade — DDR4-2133
Features — Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask
Refresh — [DATA_NEEDED: refresh rate 1x/2x]
CAS Latency — [DATA_NEEDED: CAS latency]
Die Revision — [DATA_NEEDED: die revision]
Standard Package Quantity — [DATA_NEEDED: standard package quantity]

Datasheets & Resources

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