K4A8G085WC-BIWE vs K4A8G085WC-BCPB Comparison
Detailed side-by-side comparison of K4A8G085WC-BIWE by Samsung Electronics and K4A8G085WC-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
K4A8G085WC-BCPB ✗ End of LifeSpecification Comparison
| Parameter | K4A8G085WC-BIWE | K4A8G085WC-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.29 | $2.95 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 2133 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature Range | -40°C to +95°C | — |
| Package | 78-FBGA | 78FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS Latency | 22 (CL22) | [DATA_NEEDED: CAS latency] |
| Refresh | Auto-refresh, self-refresh | [DATA_NEEDED: refresh rate 1x/2x] |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Supply Voltage | — | 1.2 V |
| Operating Temperature | — | 0 C to +85 C |
| Number of Terminals | — | 78 |
| Maximum Seated Height | — | 1.2 mm |
| Speed Grade | — | DDR4-2133 |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Revision | — | [DATA_NEEDED: die revision] |
| Standard Package Quantity | — | [DATA_NEEDED: standard package quantity] |