K4A8G085WC-BIWE vs YZ48G08V-F9HPI-M Comparison
Detailed side-by-side comparison of K4A8G085WC-BIWE by Samsung Electronics and YZ48G08V-F9HPI-M by Loongtion. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BIWE | YZ48G08V-F9HPI-M |
|---|---|---|
| Brand | Samsung Electronics | Loongtion |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.29 | $7.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature Range | -40°C to +95°C | -40°C to +85°C |
| Package | 78-FBGA | — |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | POD-12 | Parallel |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS Latency | 22 (CL22) | [DATA_NEEDED: CAS Latency] |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Supply Voltage | — | 1.2 V |
| Package Type | — | FBGA78 |
| Row Cycle Time (tRC) | — | [DATA_NEEDED: tRC] |
| Refresh Cycle Time (tRFC) | — | [DATA_NEEDED: tRFC] |
| REACH Status | — | Compliant |
| AEC-Q100 | — | Not Applicable |