K4A8G165WB-BCPB vs K4A8G165WC-BCPB Comparison
Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and K4A8G165WC-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB ✓ ActiveSamsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCPB | K4A8G165WC-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $1.31 |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Speed Grade | 2133 Mbps (PC4-17000) | — |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0C to +95C |
| Package | 96-ball FBGA (TFBGA-96) | 96-ball FBGA (TFBGA) |
| Burst Length | 8 (BL8) | — |
| Burst Type | Sequential and Interleave | — |
| CAS Latency | Programmable (e.g., 15, 16, 18) | — |
| Refresh | Auto and Self Refresh | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Package Shape | RECTANGULAR | — |
| Terminal Position | BOTTOM | — |
| RoHS Status | Compliant | Compliant |
| Memory Type | — | DDR4 SDRAM (volatile DRAM) |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Data Rate | — | DDR4-2133 (2133 Mbps/pin) |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Interface | — | DDR4 (16-bit data bus) |
| Die Generation | — | C-die (1Y nm class) |
| Mounting Type | — | Surface Mount |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | — | On-die termination (ODT), dynamic |
| MSL Level | — | [DATA_NEEDED: MSL Level] |
| Standard | — | JEDEC DDR4 SDRAM |