K4A8G165WB-BCRC vs K4A8G045WB Comparison

Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G045WB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G165WB-BCRC K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC ✓ Active
Samsung Electronics
K4A8G045WB K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB ✓ Active

Specification Comparison

Parameter K4A8G165WB-BCRC K4A8G045WB
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $12.57 $9.27
Memory Type DDR4 SDRAM (DRAM, volatile) DDR4 SDRAM (B-die)
Memory Size 8 Gb (1 GB) —
Memory Organization 512M x 16 —
Data Rate 2400 Mbps (PC4-19200) 2133 Mbps
Supply Voltage 1.2 V (1.14 V to 1.26 V) 1.2 V
Technology CMOS DRAM, Samsung 8Gb B-die —
Package 96-ball FBGA (PBGA96) 78-ball FBGA
Ball Pitch 0.8 mm —
Mounting Type Surface Mount Surface Mount
Operating Temperature -40C to +95C 0 C to +85 C
Interface DDR4 (Double Data Rate, synchronous) —
On-Die Termination Yes (ODT with dynamic ODT) Yes (ODT pin)
ZQ Calibration Yes —
CRC / CA Parity Yes (CRC function) —
Auto Precharge Yes —
Asynchronous Reset Yes Yes
Refresh Auto-refresh and self-refresh —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Density — 8 Gb
Organization — 2G x 4
Max Supply Current — 211.7 mA
Refresh Cycles — 8192
Number of Terminals — 78
Clocking — Differential clock (CK / CK#)
Posted CAS — Yes
Programmable CWL — Yes
Internal (Self) Calibration — Yes

Datasheets & Resources

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