K4A8G165WB-BCRC vs K4A8G045WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G045WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G165WB-BCRC K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC ✓ Active
Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Active

Specification Comparison

Parameter K4A8G165WB-BCRC K4A8G045WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $12.57 $2.95
Memory Type DDR4 SDRAM (DRAM, volatile) DDR4 SDRAM
Memory Size 8 Gb (1 GB) —
Memory Organization 512M x 16 —
Data Rate 2400 Mbps (PC4-19200) —
Supply Voltage 1.2 V (1.14 V to 1.26 V) —
Technology CMOS DRAM, Samsung 8Gb B-die —
Package 96-ball FBGA (PBGA96) 78-ball FBGA (PBGA78)
Ball Pitch 0.8 mm —
Mounting Type Surface Mount Surface Mount
Operating Temperature -40C to +95C 0 C to 85 C
Interface DDR4 (Double Data Rate, synchronous) CMOS, differential clock (CK/CK#)
On-Die Termination Yes (ODT with dynamic ODT) —
ZQ Calibration Yes —
CRC / CA Parity Yes (CRC function) —
Auto Precharge Yes —
Asynchronous Reset Yes —
Refresh Auto-refresh and self-refresh —
RoHS Status Compliant Compliant
Density — 8 Gb
Organization — 2G x 4
Speed — 2400 Mbps
Supply Voltage (VDD/VDDQ) — 1.2 V
Process Technology — Samsung B-die
Refresh Cycles — 8192
Maximum Supply Current — 211.7 mA
Terminals — 78
Key DDR4 Features — Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset
DLL Mode — Timing specified for DLL-enabled operation

Datasheets & Resources

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