K4A8G165WB-BCRC vs K4A8G045WB-BCRC Vergleich
Detaillierter Direktvergleich von K4A8G165WB-BCRC von Samsung Electronics und K4A8G045WB-BCRC von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
K4A8G045WB-BCRC ✓ AktivSpezifikationsvergleich
| Parameter | K4A8G165WB-BCRC | K4A8G045WB-BCRC |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $12,57 | $2,95 |
| Speichertyp | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Speichergröße | 8 Gb (1 GB) | — |
| Memory Organization | 512M x 16 | — |
| Datenrate | 2400 Mbps (PC4-19200) | — |
| Versorgungsspannung | 1.2 V (1.14 V to 1.26 V) | — |
| Technology | CMOS DRAM, Samsung 8Gb B-die | — |
| Gehäuse | 96-ball FBGA (PBGA96) | 78-ball FBGA (PBGA78) |
| Ball Pitch | 0.8 mm | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +95C | 0 C to 85 C |
| Schnittstelle | DDR4 (Double Data Rate, synchronous) | CMOS, differential clock (CK/CK#) |
| On-Die Termination | Yes (ODT with dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| CRC / CA Parity | Yes (CRC function) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| RoHS-Status | Compliant | Compliant |
| Density | — | 8 Gb |
| Speicherorganisation | — | 2G x 4 |
| Speed | — | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V |
| Process Technology | — | Samsung B-die |
| Refresh Cycles | — | 8192 |
| Maximum Supply Current | — | 211.7 mA |
| Terminals | — | 78 |
| Key DDR4 Features | — | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset |
| DLL Mode | — | Timing specified for DLL-enabled operation |