K4A8G165WB-BCRC vs K4A8G165WB-BIRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G165WB-BIRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSamsung Electronics
K4A8G165WB-BIRC
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps
K4A8G165WB-BIRC β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCRC | K4A8G165WB-BIRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.57 | $39.50 |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb (1 GB) | β |
| Memory Organization | 512M x 16 | β |
| Data Rate | 2400 Mbps (PC4-19200) | 2400 Mbps |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Technology | CMOS DRAM, Samsung 8Gb B-die | β |
| Package | 96-ball FBGA (PBGA96) | 96-ball FBGA |
| Ball Pitch | 0.8 mm | β |
| Mounting Type | Surface Mount | β |
| Operating Temperature | -40C to +95C | β |
| Interface | DDR4 (Double Data Rate, synchronous) | 16-bit |
| On-Die Termination | Yes (ODT with dynamic ODT) | β |
| ZQ Calibration | Yes | β |
| CRC / CA Parity | Yes (CRC function) | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Refresh | Auto-refresh and self-refresh | β |
| RoHS Status | Compliant | β |
| Density | β | 8 Gbit |
| Organization | β | 512M x 16 |
| Operating Temperature Range | β | -40Β°C to +95Β°C |
| DLL Enabled Mode | β | Yes |
| On-Die Termination (ODT) | β | Yes |
| Burst Length | β | 8, 16 |
| Row Address | β | 16 bits |
| Column Address | β | 10 bits |
| Bank Count | β | 16 banks |
| RoHS Compliant | β | Yes |