K4A8G165WB-BCRC vs K4A8G165WB-BIRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G165WB-BIRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSamsung Electronics
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BIRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCRC | K4A8G165WB-BIRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $32.50 |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Interface | Parallel (DDR4 SDRAM bus) | Pseudo-open-drain |
| Supply Voltage (VDD) | 1.2 V | — |
| Data Rate | 2400 Mbps/pin (DDR4-2400) | 2400 Mbps |
| Technology | CMOS, B-die 8Gb die | — |
| Package | 96-ball FBGA (PBGA96) | 96-FBGA |
| Mounting Type | Surface Mount | — |
| Operating Temperature | -40C to +95C | -40°C to +95°C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Supply Voltage | — | 1.2 V |
| CAS Latency | — | 15, 16, 17 |
| Burst Length | — | 8 (BL8) and 4 (BC4) |
| On-Die Termination | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |
| Row Address | — | 16K |
| Column Address | — | 1K |
| RoHS | — | Compliant |