K4A8G165WB-BCTD vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WB-BCTD | H5AN8G6NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gb | — |
| Data Rate | 2666 Mbps/pin (PC4-2666) | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-ball FBGA | 96-ball FBGA (13mm x 7.5mm) |
| Operating Temperature | 0°C to +95°C (TC) | — |
| CAS Latency | [DATA_NEEDED: CL value] | 22 cycles (at 3200 Mbps) |
| tRCD | [DATA_NEEDED: tRCD value] | — |
| tRP | [DATA_NEEDED: tRP value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | Compliant |
| Density | — | 8 Gb |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |