K4A8G165WB-BCTD vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCTD | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $6.55 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gb | — |
| Data Rate | 2666 Mbps/pin (PC4-2666) | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-ball FBGA | 96FBGA |
| Operating Temperature | 0°C to +95°C (TC) | 0C to +85C |
| CAS Latency | [DATA_NEEDED: CL value] | — |
| tRCD | [DATA_NEEDED: tRCD value] | — |
| tRP | [DATA_NEEDED: tRP value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Density | — | 8 Gb |
| Access Time (CAS Latency) | — | 19 ns |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| Burst Length | — | 8 |
| Bank Group Architecture | — | Yes |
| On-Die Termination (ODT) | — | Yes, dynamic ODT with ZQ calibration |
| Functions | — | Auto precharge, asynchronous reset, CRC, data mask |
| RoHS Status | — | Compliant |
| Lead Free | — | Yes |