K4A8G165WB-BCTD vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WB-BCTD | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gb | — |
| Data Rate | 2666 Mbps/pin (PC4-2666) | 2400 Mbps |
| Supply Voltage | 1.2 V | — |
| Package | 96-ball FBGA | 96-ball FBGA (9mm x 13mm) |
| Operating Temperature | 0°C to +95°C (TC) | 0°C to +95°C (case) |
| CAS Latency | [DATA_NEEDED: CL value] | Programmable (e.g., 16, 17, 18) |
| tRCD | [DATA_NEEDED: tRCD value] | — |
| tRP | [DATA_NEEDED: tRP value] | — |
| Refresh | Auto-refresh, self-refresh | Temperature-compensated self-refresh (TCSR) |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | Compliant |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VPP Voltage | — | 2.5 V |
| Interface | — | 16-bit I/O |
| Banks | — | 16 (4 bank groups) |
| Burst Length | — | 8 (BL8) |
| Mounting Type | — | Surface Mount |