K4A8G165WB-BCWE vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ ActiveSamsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | — |
| Unit Price (USD) | $6.25 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps/pin | 2666 Mbps |
| Supply Voltage | 1.2 V | — |
| Access Time | 19 ns | — |
| Interface | Parallel | DDR4 (parallel, double data rate) |
| Package | 96FBGA | 96FBGA |
| Operating Temperature | 0C to +85C | 0C to +85C |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance statement] | Compliant (per JLCPCB listing: ROHS) |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |