K4A8G165WB-BCWE vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β Active
Specification Comparison
| Parameter | K4A8G165WB-BCWE | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 2666 Mbps/pin (PC4-2666) |
| Supply Voltage | 1.2 V | 1.2 V |
| Access Time (CAS Latency) | 19 ns | β |
| Interface | Parallel | β |
| Package | 96FBGA | 96-ball FBGA |
| Mounting Type | Surface Mount | β |
| Operating Temperature | 0C to +85C | 0Β°C to +95Β°C (TC) |
| Burst Length | 8 | β |
| Bank Group Architecture | Yes | β |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | β |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | β |
| RoHS Status | Compliant | β |
| Lead Free | Yes | β |
| Total Density | β | 8 Gb |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |
| ZQ Calibration | β | Yes |
| Data Mask | β | Yes |
| RoHS | β | Compliant |