K4A8G165WB-BCWE vs NT5AD512M16B4-HR Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and NT5AD512M16B4-HR by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE ✓ Active
Specification Comparison
| Parameter | K4A8G165WB-BCWE | NT5AD512M16B4-HR |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $43.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2V |
| Access Time (CAS Latency) | 19 ns | — |
| Interface | Parallel | — |
| Package | 96FBGA | 96-ball TFBGA |
| Mounting Type | Surface Mount | — |
| Operating Temperature | 0C to +85C | — |
| Burst Length | 8 | — |
| Bank Group Architecture | Yes | — |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | — |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | — |
| RoHS Status | Compliant | — |
| Lead Free | Yes | — |
| Temperature Range | — | 0°C to +95°C |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS | — | Compliant |