K4A8G165WB-BIWE vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BIWE by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BIWE | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.22 | $12.57 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps | 2400 Mbps (PC4-19200) |
| Supply Voltage | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Operating Temperature | -40°C to +95°C | -40C to +95C |
| Package | 96-ball FBGA | 96-ball FBGA (PBGA96) |
| Interface | Parallel | DDR4 (Double Data Rate, synchronous) |
| Burst Length | 8, 16 | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Refresh | Auto-refresh, Self-refresh | Auto-refresh and self-refresh |
| On-Die Termination | Yes | Yes (ODT with dynamic ODT) |
| RoHS | Compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 96 | — |
| Memory Size | — | 8 Gb (1 GB) |
| Memory Organization | — | 512M x 16 |
| Technology | — | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | — | 0.8 mm |
| ZQ Calibration | — | Yes |
| CRC / CA Parity | — | Yes (CRC function) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| RoHS Status | — | Compliant |