K4A8G165WC-BCPB vs K4A8G165WC-BCWE Comparison
Detailed side-by-side comparison of K4A8G165WC-BCPB by Samsung Electronics and K4A8G165WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ ActiveSamsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCPB | K4A8G165WC-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.31 | $38.00 |
| Memory Type | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Data Rate | DDR4-2133 (2133 Mbps/pin) | 3200 Mbps |
| Supply Voltage | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Interface | DDR4 (16-bit data bus) | Differential (CK, /CK) |
| Package | 96-ball FBGA (TFBGA) | 96-FBGA |
| Die Generation | C-die (1Y nm class) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | — |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | — |
| MSL Level | [DATA_NEEDED: MSL Level] | — |
| RoHS Status | Compliant | Compliant |
| Standard | JEDEC DDR4 SDRAM | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Operating Temperature Range | — | 0°C to +95°C |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8 (BL8) / 4 (BC4) |
| Number of Banks | — | 16 |
| Row Address Bits | — | 16 |
| Column Address Bits | — | 10 |
| JEDEC Standard | — | JEDEC DDR4 |