K4A8G165WC-BCTD vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of K4A8G165WC-BCTD by Samsung Electronics and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCTD
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD β Active
Specification Comparison
| Parameter | K4A8G165WC-BCTD | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $41.20 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 2666 Mbps (DDR4-2666) | 2666 Mbps/pin (PC4-2666) |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | β |
| Clock Frequency | 1.333 GHz | β |
| Operating Temperature | 0C to +95C | 0Β°C to +95Β°C (TC) |
| Package | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-ball FBGA |
| Mounting Type | Surface Mount | β |
| Die Revision | C-die | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| ZQ Calibration | Yes (240 ohm resistor to GND) | Yes |
| Dynamic On-Chip Termination (ODT) | Yes | β |
| Data Mask Function | Yes | β |
| RoHS Status | Compliant | β |
| Total Density | β | 8 Gb |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |
| Data Mask | β | Yes |
| RoHS | β | Compliant |