K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps x16 | Samsung
MPN: K4A8G165WC-BCTD ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $51.42 | $51.42 |
| 10 | $48.85 | $488.50 |
| 100 | $45.2 | $4,520.00 |
| 500 | $42.1 | $21,050.00 |
| 1,000 | $39.5 | $39,500.00 |
Drop-in alternatives for K4A8G165WC-BCTD — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G165WC-BCRC
✅ Drop-In✓ In Stock
$23 / Unit
View Datasheet →K4A8G165WC-BCPB
✅ Drop-In✓ In Stock
$1.31 / Unit
View Datasheet →K4A8G165WB-BCTD
✅ Drop-In✓ In Stock
$37 / Unit
View Datasheet →MT40A512M16LY-062E IT:E
✅ Drop-In📋 Reference alternative (not in catalog)
MT40A512M16LY-075E
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G165WC-BCTD Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 512M x16 |
| Data Rate | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1.333 GHz |
| Supply Voltage (VDD) | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V |
| Operating Temperature | 0C to +95C |
| Package | 96FBGA |
| Mounting Type | Surface Mount |
| Die Generation | C-die (1Y nm-class process) |
| CRC Function | Yes (write CRC) |
| ZQ Calibration | Yes |
| On-Die Termination | Dynamic ODT |
| Data Mask | Yes (x16 DM) |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| RoHS Status | Compliant |
K4A8G165WC-BCTD 96fbga Pin Configuration Guide
Complete pinout information for K4A8G165WC-BCTD (96fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A8G165WC-BCTD.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G165WC-BCTD is suitable for 6 applications: Industrial PC and Embedded Controller Main Memory, Networking Equipment Line Cards and Switches, Digital TV and Set-Top Box Systems, Test and Measurement Instrumentation Buffering, Automotive-Adjacent Infotainment and Display Systems, FPGA-Based Data Acquisition and Processing Boards.
Industrial PC and Embedded Controller Main Memory
The K4A8G165WC-BCTD fits industrial PC and embedded controller main-memory designs that require mainstream DDR4-2666 bandwidth at 1.2 V power budgets. Its 8 Gb x16 organization lets a single 16-bit memory channel be populated with one or two devices, reducing BOM count versus x8 parts. The 0C to +95C operating range covers most fanless and industrial enclosure environments, and write CRC plus dynamic ODT preserve signal integrity on longer industrial motherboards. Place the SDRAM close to the SoC with length-matched fly-by address/command routing per JEDEC x16 ballout; the trade-off versus x8 is that side-band ECC granularity requires an x8 device if your controller mandates it.
Recommended
Networking Equipment Line Cards and Switches
Switches, routers, and network-processor line cards use the K4A8G165WC-BCTD for packet buffering and control-plane memory where DDR4-2666 (1.333 GHz clock) throughput sustains gigabit-class traffic. The 2666 Mbps data rate provides substantial bandwidth headroom per 16-bit channel, and the asynchronous reset input supports the hot reset behavior expected in carrier-grade hardware. ZQ calibration keeps output driver impedance accurate across chassis temperature swings, reducing bit-error rates on multi-drop fly-by topologies. Designers should implement length-matched DQS/DQ strobes and use dynamic ODT during writes to simplify termination on dense line-card PCBs with constrained layer counts.
Recommended
Digital TV and Set-Top Box Systems
Consumer set-top boxes and digital TVs pair DDR4-capable SoCs with the K4A8G165WC-BCTD to buffer video streams and run middleware at 2666 Mbps-class bandwidth while drawing 1.2 V rail power - roughly 25% lower than DDR3 per Samsung's DDR4 platform data. The x16 organization matches the 16-bit memory buses typical of broadcast SoCs, minimizing device count and PCB area in cost-sensitive consumer boards. Data mask support enables partial writes needed by video frame buffers, and auto precharge reduces controller command overhead during sequential stream access. Verify the enclosure keeps the die within the 0C to +95C range under sustained 4K decoding workloads.
Recommended
Test and Measurement Instrumentation Buffering
Oscilloscopes, logic analyzers, and signal generators use the K4A8G165WC-BCTD as deep capture and waveform buffer memory. DDR4-2666 class bandwidth (2666 Mbps over a 16-bit bus) supports high sample-rate streaming to buffer, while the 8 Gb density enables long record lengths in a compact 96FBGA footprint. Write CRC and ZQ calibration protect data integrity during sustained full-bandwidth acquisition, which matters when waveform accuracy is the product's core value. Instruments benefit from the part's wide adoption and multi-source JEDEC compatibility: Micron MT40A512M16LY-062E can be second-sourced onto the same footprint for supply resilience in long-lifecycle instrument platforms.
Recommended
Automotive-Adjacent Infotainment and Display Systems
Non-safety infotainment head units, cluster displays, and telematics gateways that operate in cabin-temperature environments (0C to +95C) can use the K4A8G165WC-BCTD to feed graphics pipelines on DDR4-2666 bandwidth. The x16 bus matches the single-channel memory controllers common in infotainment SoCs, and the 1.2 V supply eases thermal design in sealed dash enclosures. Because this commercial-temperature part is not AEC-Q100 qualified, it should be restricted to cabin-zone applications away from under-hood extremes; for harsher zones, designers must select automotive-grade DDR4 variants instead. Dynamic ODT and CRC support clean signaling on the multi-layer flex-rigid PCBs typical of display modules.
Recommended
FPGA-Based Data Acquisition and Processing Boards
DDR4 memory-controller-capable FPGAs and processor modules pair with the K4A8G165WC-BCTD for high-throughput data acquisition, image processing, and machine-vision boards. The 512M x16 organization provides a 16-bit interface with 8 Gb per device, and DDR4-2666 class timing is supported by mainstream FPGA hard memory controllers after calibration training on the C-die. ZQ calibration and dynamic ODT are essential here because FPGA I/O banks drive fly-by topologies with varying trace lengths; enable write leveling during controller initialization. Keep the FBGA within the 0C to +95C envelope and budget a clean 1.14 V to 1.26 V VDD rail with fast transient response for burst-write current.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WC-BCTD — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WC-BCRC | K4A8G165WB-BCTD | MT40A512M16LY-062E IT:E | MT40A512M16LY-075E |
|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA - same | 96FBGA JEDEC footprint - same | 96FBGA JEDEC footprint - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x16 | 512M x16 | 512M x16 | 512M x16 | 512M x16 |
| Data Rate | 2666 Mbps | 2666 Mbps class (per bin) | 2666 Mbps | 2666 Mbps (DDR4-2666) | 2133 Mbps (DDR4-2133) |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +95C | Per Samsung suffix bin | 0C to +95C | Industrial (per Micron IT grade) | [DATA_NEEDED] |
| Die Generation | C-die (1Y nm-class) | C-die | B-die | Micron rev.E | Micron rev.E |
| ECC-Friendly Organization | No (x16, no side-band ECC granularity) | No (x16) | No (x16) | No (x16) | No (x16) |
Key Differentiators
- Mainstream DDR4-2666 C-die with broad adoption (vs MT40A512M16LY-075E)
- Advanced 1Y nm-class process efficiency (vs K4A8G165WB-BCTD)
- x16 bus for minimal device count (vs K4A8G085WC-BCTD)
Design Notes
Regulate the 1.2 V VDD rail to stay within 1.14 V to 1.26 V under burst-load transients; DDR4 write bursts draw fast current steps that a sluggish converter will translate into droop below the minimum. Use a dedicated step-down regulator (for example a 2 A-class device such as the TPS54218 family) with low-ESR bulk plus high-frequency ceramic decoupling at the FBGA power balls. Estimated: at 2666 Mbps a x16 DDR4 device can draw roughly several hundred milliamps average, so size the rail for your controller's activity factor rather than worst-case nameplate.
Follow JEDEC DDR4 x16 fly-by topology: route address/command in fly-by with termination at the last device, and length-match DQ/DQS/DM per byte lane (x16 provides one DQS pair per 8-bit lane). Keep trace skew within controller specifications, reference signals to a solid ground plane, and place the 96FBGA within a few centimeters of the SoC on 4-layer or better PCBs. Respect the datasheet ball map exactly - it is JEDEC-standard, which is what makes Micron MT40A512M16LY parts footprint-compatible.
Three frequent mistakes with this part: (1) treating x16 as ECC-capable - side-band ECC requires x8 devices such as K4A8G085WC-BCTD, and the ballouts are NOT interchangeable; (2) ignoring temperature derating - the 0C to +95C range is a commercial/extended bin, not automotive AEC-Q100; do not place it in under-hood zones; (3) skipping memory-controller training updates when substituting the B-die K4A8G165WB-BCTD or a Micron part for the C-die - die-revision-dependent initialization parameters can cause training failures at DDR4-2666.
Compliance Information
RoHS compliance per JLCPCB part listing. Commercial-temperature DDR4 component; not AEC-Q100 qualified. REACH/halogen/conflict-minerals status not stated in provided data.
