K4AAG085WA-BCWE vs H5ANAG8NAMR-UHC Comparison
Detailed side-by-side comparison of K4AAG085WA-BCWE by Samsung Electronics and H5ANAG8NAMR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG085WA-BCWE | H5ANAG8NAMR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.24 | $2.15 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | DDR4-2400 (2400 MT/s) |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Operating Temperature | 0 C to 85 C | [DATA_NEEDED: operating temperature range] |
| Package | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) | FBGA-78 |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | JEDEC DDR4 | Parallel, DDR4 |
| Memory Width | 8-bit | — |
| Refresh | Auto-refresh (per JEDEC DDR4) | Self-refresh and auto-refresh (DDR4) |
| Application Class | Main memory / embedded DRAM | — |
| RoHS Status | Compliant (per JLCPCB listing) | Compliant (lead-free FBGA package) |
| Manufacturer | Samsung Electronics | SK Hynix |
| Bank Group Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Applications | — | Data storage, firmware boot, industrial controllers, computing modules |