K4AAG085WA-BCWE vs H5ANAG8NAMR-UHC 对比
详细并排对比 K4AAG085WA-BCWE 出自 Samsung Electronics 和 H5ANAG8NAMR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4AAG085WA-BCWE | H5ANAG8NAMR-UHC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.24 | $2.15 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 3200 Mbps (DDR4-3200) | DDR4-2400 (2400 MT/s) |
| 电源电压 | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| 工作温度 | 0 C to 85 C | [DATA_NEEDED: operating temperature range] |
| 封装 | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) | FBGA-78 |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | JEDEC DDR4 | Parallel, DDR4 |
| Memory Width | 8-bit | — |
| Refresh | Auto-refresh (per JEDEC DDR4) | Self-refresh and auto-refresh (DDR4) |
| Application Class | Main memory / embedded DRAM | — |
| RoHS 状态 | Compliant (per JLCPCB listing) | Compliant (lead-free FBGA package) |
| Manufacturer | Samsung Electronics | SK Hynix |
| Bank Group Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Applications | — | Data storage, firmware boot, industrial controllers, computing modules |