K4AAG085WM-BCWE vs H5ANAG8NCMR-VKC Comparison
Detailed side-by-side comparison of K4AAG085WM-BCWE by Samsung Electronics and H5ANAG8NCMR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG085WM-BCWE | H5ANAG8NCMR-VKC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.00 | $8.05 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | — |
| Organization | 2G x 8 | — |
| Data Rate | 3200 Mbps (DDR4-3200) | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Package | 78FBGA | FBGA-78 |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-standard) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| Memory Size | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade | — | VK (per SK hynix speed-bin suffix) |
| Power Class | — | Normal Power |
| Bank Groups | — | 4 |
| Banks Total | — | 16 |
| CAS Latency | — | [DATA_NEEDED: CAS latency for VK speed bin] |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |
| Manufacturer Process | — | CMOS DRAM |