K4AAG085WM-BCWE vs H5ANAG8NCMR-VKC 对比
详细并排对比 K4AAG085WM-BCWE 出自 Samsung Electronics 和 H5ANAG8NCMR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4AAG085WM-BCWE | H5ANAG8NCMR-VKC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.00 | $8.05 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | — |
| 存储组织 | 2G x 8 | — |
| 数据速率 | 3200 Mbps (DDR4-3200) | 2666 Mbps/pin (DDR4-2666) |
| 电源电压 | 1.2 V | — |
| 工作温度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封装 | 78FBGA | FBGA-78 |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | DDR4 (JEDEC-standard) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| 存储容量 | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade | — | VK (per SK hynix speed-bin suffix) |
| Power Class | — | Normal Power |
| Bank Groups | — | 4 |
| Banks Total | — | 16 |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency for VK speed bin] |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |
| Manufacturer Process | — | CMOS DRAM |