K4AAG165WA-BCWE vs K4AAG165WM-BCWE Comparison
Detailed side-by-side comparison of K4AAG165WA-BCWE by Samsung Electronics and K4AAG165WM-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG165WA-BCWE | K4AAG165WM-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $62.40 | $54.65 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Supply Voltage | 1.2 V | — |
| Package | 96-ball FBGA | 78-ball FBGA |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | -40C to +95C | [DATA_NEEDED: temperature range for WM-BCWE] |
| Interface Type | Parallel, DDR4 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Format | DRAM (Volatile) | — |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | — |
| RoHS Status | Compliant | Compliant |
| Packaging | Tray | — |
| Product Status | Active | — |
| Density | — | 16 Gbit |
| Organization | — | 256M x 16 (1G x 16) |
| Interface | — | Parallel (DDR4) |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| CAS Latency | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |