K4AAG165WA-BCWE - 16Gb DDR4 3200Mbps SDRAM | Samsung
MPN: K4AAG165WA-BCWE ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $79.74 | $79.74 |
| 10 | $74.5 | $745.00 |
| 100 | $69.8 | $6,980.00 |
| 500 | $65.9 | $32,950.00 |
| 1,000 | $62.4 | $62,400.00 |
K4AAG165WA-BCWE Overview
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, a type of volatile semiconductor memory that stores each bit in a capacitor-based cell and transfers data on both clock edges. Within the memory hierarchy, DDR4 sits in the main-memory tier between cache memories (SRAM) and storage (NAND flash), and it succeeds DDR3 by lowering operating voltage from 1.5V to 1.2V and raising per-pin bandwidth. Samsung is the worlds largest DRAM manufacturer, and its DDR4 family spans densities from 4Gb to 32Gb in x4, x8, and x16 organizations.
Key features of the K4AAG165WA-BCWE include the 16Gb density in a x16 organization - which halves the bus width requirement compared to x8 parts and suits systems needing 16-bit or 32-bit memory buses - the 3200 Mbps speed bin for maximum DDR4 bandwidth, and 1.2V operation delivering roughly 25% lower power than DDR3 at equivalent performance. According to Samsung, DDR4 also brings improved bank-group architecture (bank groups with per-group activation) that raises effective bandwidth over DDR3.
The device uses standard DDR4 core architecture with 8n prefetch, on-die termination (ODT), DLL for output timing, and a command/address training interface. Bank groups allow staggered column access to boost data throughput without increasing core frequency. The BCWE speed bin with a 1600 MHz clock supports the DDR4-3200 JEDEC data rate.
Typical applications include laptop and desktop PC main memory (as discrete DRAM components on SO-DIMM or soldered-down designs), embedded computing boards, industrial gateways, networking equipment, and set-top-box platforms requiring 2 GB per chip with a 16-bit interface.
Design consideration: DDR4-3200 requires length-matched, impedance-controlled routing (single-ended 40 ohm traces, fly-by command/address topology) and VTT/DDQ termination - budget stackup and decoupling early. The x16 organization increases data-pin count, so plan power integrity for simultaneous switching output noise.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for K4AAG165WA-BCWE — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with K4AAG165WA-BCWE (same form factor and footprint) — differing in Package, Interface, RoHS Status, Memory Type, Data Rate.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4AAG165WA-BCTD
✅ Drop-In✓ In Stock
$60.59 / Unit
View Datasheet →K4AAG165WA-BCRC
✅ Drop-In✓ In Stock
$64.9 / Unit
View Datasheet →K4AAG165WA-BCPB
✅ Drop-In✓ In Stock
$63.79 / Unit
View Datasheet →K4AAG085WA-BCWE
✅ Drop-In✓ In Stock
$7.24 / Unit
View Datasheet →K4AAG165WA-BCWE Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 16 Gb (2 GB) |
| Memory Organization | 1G x 16 |
| Data Rate | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V |
| Package | 96-ball FBGA |
| Package Dimensions | 13 x 9 mm |
| Ball Pitch | 0.8 mm |
| Operating Temperature | -40C to +95C |
| Interface Type | Parallel, DDR4 |
| Mounting Type | Surface Mount |
| Memory Format | DRAM (Volatile) |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture |
| RoHS Status | Compliant |
| Packaging | Tray |
| Product Status | Active |
K4AAG165WA-BCWE 13 x 9 mm Pin Configuration Guide
Pin configuration for K4AAG165WA-BCWE (13 x 9 mm package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4AAG165WA-BCWE.
Refer to the datasheet for full pin configuration.
Typical Applications
K4AAG165WA-BCWE is suitable for 6 applications: Laptop and Mobile PC Main Memory, Embedded Computing and Industrial Gateways, Networking and Communication Equipment, Set-Top Boxes and Smart TV Platforms, Gaming Consoles and Graphics-Adjacent Memory, Server and Data Center Memory Modules (DIMM Components).
Laptop and Mobile PC Main Memory
The K4AAG165WA-BCWE fits soldered-down main-memory designs in thin laptops and mini-PCs where a 2 GB-per-chip density minimizes component count. Its 16-bit x16 organization lets a two-chip design build a 4 GB / 32-bit bus, or four chips build 8 GB / 64-bit, using the standard DDR4 FBGA-96 footprint. At DDR4-3200 the part supplies 25.6 GB/s per 64-bit channel, sufficient for mainstream computing workloads, while 1.2V operation keeps memory power within typical mobile thermal budgets. Field repair of Samsung-equipped laptops also uses this exact chip with BGA rework.
Recommended
Embedded Computing and Industrial Gateways
Industrial gateways, edge-compute nodes, and HMI controllers use DDR4 components soldered on the carrier PCB for 2-8 GB of main memory. The K4AAG165WA-BCWE's -40C to +95C operating range covers unconditioned cabinets and outdoor enclosures, and its 3200 Mbps bin matches the memory interfaces of ARM-based SoCs and x86 embedded processors. The x16 organization is especially convenient for SoCs with 32-bit DDR4 controllers, needing just two chips per 4 GB. Designers should implement fly-by address routing and on-die termination per the DDR4 standard, and account for 2x refresh above 85C ambient.
Recommended
Networking and Communication Equipment
Routers, switches, and 5G small-cell baseband cards require deep packet buffers and fast table memory, making 2 GB-per-chip DDR4 efficient. The K4AAG165WA-BCWE's 25.6 GB/s per 64-bit channel at DDR4-3200 sustains line-rate packet processing in access equipment, while its bank-group architecture raises effective bandwidth for the random access patterns typical of queuing and flow tables. Network processors and packet SoCs with x16 DDR4 interfaces pair directly with two to four of these components. Thermal design should derate for sealed fanless enclosures commonly used in telecom deployments.
Recommended
Set-Top Boxes and Smart TV Platforms
Broadcast and streaming set-top boxes typically need 2-4 GB of DDR4 main memory for OS, middleware, and video buffering. The K4AAG165WA-BCWE supplies 2 GB in a single 13 x 9 mm component, letting cost-optimized platforms use one or two chips with SoCs such as STB-class ARM cores that expose a 16- or 32-bit DDR4 controller. Its 1.2V rail integrates with the platform's existing DC-DC supplies, and DDR4-3200 headroom leaves margin for 4K video decode buffering. The FBGA-96 package suits the dense, single-sided PCB layouts typical of STB main boards.
Recommended
Gaming Consoles and Graphics-Adjacent Memory
Cost-sensitive console and arcade platforms use commodity DDR4 for system memory and texture staging. The K4AAG165WA-BCWE's x16 organization builds wide buses quickly - eight chips create a 128-bit / 16 GB pool - and the 3200 Mbps bin provides the bandwidth for frame buffers and asset streaming. Because the same FBGA-96 footprint is shared across Samsung 8Gb and 16Gb x16 parts, platform vendors can populate 8 GB or 16 GB variants of a board from one PCB. Memory-controller training and SPD data must match the fitted density when swapping configurations.
Recommended
Server and Data Center Memory Modules (DIMM Components)
DDR4 DIMMs are assembled from DRAM components like the K4AAG165WA-BCWE; its 2 GB-per-chip density allows 16 GB DIMMs from eight x16 components or module designs with fewer, denser chips. Samsung DDR4's 1.2V operation cuts module power roughly 25% versus DDR3 at the same bandwidth - a direct data-center OPEX saving. Server platforms at DDR4-3200 (PC4-25600) commonly specify x8 parts, but x16 components serve cost-optimized and client-server module tiers. Module makers must honor fly-by CA routing, per-chip ODT settings, and thermal sensor integration (TSO) in the module design.
Recommended
Recommended Products Summary
Engineering reference data for K4AAG165WA-BCWE — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4AAG165WA-BCTD | K4AAG165WA-BCRC | K4AAG165WA-BCPB | K4AAG085WA-BCWE |
|---|---|---|---|---|---|
| Package | FBGA-96 (13 x 9 mm, 0.8 mm pitch) | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same footprint, x8 ball definition |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Memory Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 2G x 8 |
| Memory Technology | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Product Status | Active | Active | Active | Active | Active |
Key Differentiators
- Maximum DDR4-3200 speed bin in family (vs K4AAG165WA-BCRC)
- Highest density per chip reduces BOM count (vs K4A8G165WC-BCWE)
- x16 organization simplifies 32-bit bus designs (vs K4AAG085WA-BCWE)
Design Notes
Copy the DDR4 FBGA-96 land pattern directly from the Samsung datasheet or the LCSC published footprint for C2920140 - do not redraw it. For DDR4-3200 x16 buses, length-match DQ/DQS/DM groups within the controller's spec (typically +/-25 mils intra-byte, tighter skew per byte lane), route single-ended traces near 40 ohm, and use fly-by topology for clock/address/command with VTT termination at the trace end. Keep 0.1uF decoupling within 2 mm of each VDD ball pair plus bulk 10-22uF per chip.
The 1.2V rail supplies the DRAM core and interface; x16 parts switch 18 data pins per chip (DQ, DQS pairs, DM), so simultaneous-switching noise is higher than x8. Budget the regulator for peak read/write currents with margin, use a solid VDD plane, and add VTT (0.6V) termination supply with its own bulk capacitance near the termination points. Confirm whether your platform also requires the 2.5V VPP rail per DDR4 system design before finalizing the power tree.
The K4AAG165WA-BCWE is rated -40C to +95C. Above 85C, DDR4 requires doubled refresh rate (x2 refresh), which slightly reduces effective bandwidth and raises standby power. In sealed or high-ambient enclosures, verify junction temperature with the datasheet thermal resistance for FBGA-96 and account for self-heating at sustained DDR4-3200 traffic. If enclosure temperature can exceed 85C at the chip, either improve airflow or derate the memory controller's operating point.
Samsung suffix letters encode the speed/temp bin: BCWE, BCTD, BCRC, and BCPB are different bins of the same 16Gb die. Ordering or substituting the wrong suffix can fail memory training if your controller timings target a slower bin, or waste margin if a faster bin is fitted without re-tuning. Also confirm density configuration in the bootloader/SPD data before swapping 8Gb and 16Gb chips on the same board - the footprint is shared but the address map is not.
Compliance Information
ROHS compliance stated on JLCPCB listing. REACH, MSL, halogen-free, and conflict-minerals status not stated in retrieved data - request declarations from Samsung or distributor.
