K4B4G1646 vs K4B4G1646E-BYK000 Comparison
Detailed side-by-side comparison of K4B4G1646 by Samsung Electronics and K4B4G1646E-BYK000 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646 | K4B4G1646E-BYK000 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.96 | $0.56 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Interface | Parallel | Parallel |
| Max Data Rate | Up to 2133 Mbps (grade dependent) | — |
| Clock Frequency Range | 800 MHz to 2133 Mbps (grade dependent) | — |
| Supply Voltage | 1.5 V (DDR3L variants 1.35 V) | — |
| Package | 96-FBGA | 96-FBGA (BYK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| On-Chip Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Die Revisions | B-die, D-die, Q-die (DDR3L) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| Clock Frequency | — | 800 MHz |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Supply Voltage (VDD) | — | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Number of Banks | — | [DATA_NEEDED: bank count] |
| Die Process | — | Samsung E-die |
| Features | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |
| Access Time | — | 1.25 ns |