K4B4G1646D-BCH90 vs K4B4G1646E-BMMA Comparison
Detailed side-by-side comparison of K4B4G1646D-BCH90 by Samsung Electronics and K4B4G1646E-BMMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCH90 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BCH90 | K4B4G1646E-BMMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $16.08 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | 8 |
| Data Rate | 2133 Mb/s per pin | 1600 Mbps |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.35 V |
| Package | 96-ball FBGA | 96-FBGA (9x13 mm) |
| Operating Temperature | 0°C to +85°C | -40°C to +95°C |
| CAS Latency | 9-14 clocks (programmable) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 and 4 | 8, 4 (with burst chop) |
| On-Die Termination | Yes (ODT) | Yes (Dynamic ODT) |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS Compliant | Yes | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Interface | — | Parallel |
| Clock Frequency | — | 800 MHz |
| RoHS | — | Compliant |