K4B4G1646D-BCH90 vs K4B4G1646E-BMMA Comparison
Detailed side-by-side comparison of K4B4G1646D-BCH90 by Samsung Electronics and K4B4G1646E-BMMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BCH90
K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCH90 β ActiveSamsung Electronics
K4B4G1646E-BMMA
K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BMMA β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BCH90 | K4B4G1646E-BMMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $15.70 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | 8 |
| Data Rate | 2133 Mb/s per pin | 1600 Mbps |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.35 V |
| Package | 96-ball FBGA | 96-FBGA (9x13 mm) |
| Operating Temperature | 0Β°C to +85Β°C | -40Β°C to +95Β°C |
| CAS Latency | 9-14 clocks (programmable) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 and 4 | 8, 4 (with burst chop) |
| On-Die Termination | Yes (ODT) | Yes (Dynamic ODT) |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| RoHS Compliant | Yes | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| Interface | β | Parallel |
| Clock Frequency | β | 800 MHz |
| RoHS | β | Compliant |