K4B4G1646D-BCH90 vs K4B4G1646E-BMMA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BCH90 disebabkan oleh Samsung Electronics dan K4B4G1646E-BMMA disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCH90 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BCH90 | K4B4G1646E-BMMA |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $16.08 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasi | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | 8 |
| Kadar Data | 2133 Mb/s per pin | 1600 Mbps |
| Tegangan Pemberi Arus | 1.35V (1.283V to 1.45V) | 1.35 V |
| Kemasan | 96-ball FBGA | 96-FBGA (9x13 mm) |
| Suhu Operasi | 0°C to +85°C | -40°C to +95°C |
| Latensi CAS | 9-14 clocks (programmable) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 and 4 | 8, 4 (with burst chop) |
| On-Die Termination | Yes (ODT) | Yes (Dynamic ODT) |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS Compliant | Yes | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | — |
| Antaramuka | — | Parallel |
| Clock Frequency | — | 800 MHz |
| RoHS | — | Compliant |