K4B4G1646D-BFMA vs K4B4G1646Q Comparison
Detailed side-by-side comparison of K4B4G1646D-BFMA by Samsung Electronics and K4B4G1646Q by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646D-BFMA | K4B4G1646Q |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps (PC3-14900) |
| Supply Voltage | 1.5V | 1.35V |
| Package | 96-ball FBGA | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | 8 (BL8) |
| CAS Latency | Programmable | Programmable |
| On-Die Termination | Yes | Yes (ODT) |
| Temperature Range | 0°C to 95°C (case) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Data Bus Width | — | 16 bits |
| Die | — | Q-die |
| RoHS Compliant | — | Yes |
| Operating Temperature | — | [DATA_NEEDED: Operating temperature range] |