K4B4G1646D-BHMA vs K4B4G1646D-BYH90 Comparison
Detailed side-by-side comparison of K4B4G1646D-BHMA by Samsung Electronics and K4B4G1646D-BYH90 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BHMA | K4B4G1646D-BYH90 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.90 | $8.80 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 512M x 16 |
| Data Rate | 1866 Mbps | 2133 Mbps/pin |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35V (1.283V to 1.45V) |
| Package | 96-ball FBGA | 96-ball FBGA (TFBGA) |
| Operating Temperature | -40°C to +95°C (TC) | 0°C to +85°C |
| CAS Latency | 13 (at 1866 Mbps) | Programmable (e.g., 11, 12, 13) |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| Number of Terminals | 96 | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Refresh Mode | Auto and Self Refresh | — |
| I/O Interface | — | x16 |
| Number of Banks | — | 8 |
| Ball Pitch | — | 0.8 mm |
| On-Die Termination | — | Yes (ODT pin) |
| ZQ Calibration | — | Yes (240-ohm resistor to ground) |
| RoHS | — | Compliant |