K4B4G1646D-BMK0 vs K4B4G1646F-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646D-BMK0 by Samsung Electronics and K4B4G1646F-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BMK0
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 β ActiveSamsung Electronics
K4B4G1646F-BYK0
K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646F-BYK0 β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BMK0 | K4B4G1646F-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.90 | $1.80 |
| Density | 4 Gb | β |
| Organization | 256M x 16 | β |
| Speed Grade | 1600 Mbps (PC3L-12800) | β |
| Voltage | 1.35 V | β |
| Operating Temperature | -40Β°C to 95Β°C | 0Β°C to 95Β°C (TC) |
| Package | 96FBGA (TFBGA) | 96-ball FBGA |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Die Version | D-die | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| Number of Terminals | 96 | β |
| Package Code | TFBGA | β |
| Number of Functions | 1 | β |
| Data Rate | 1600 Mbps | 1866 Mbps |
| Memory Size | β | 4 Gb |
| Memory Organization | β | 256M x 16 |
| Supply Voltage | β | 1.35V / 1.5V |
| Clock Frequency | β | 933 MHz |
| Interface | β | Parallel |
| Burst Length | β | 8 and 4 |
| CAS Latency | β | Programmable |
| On-Die Termination | β | Yes |
| ZQ Calibration | β | Yes |
| Auto Precharge | β | Yes |
| Self-Refresh | β | Yes |
| RoHS | β | Compliant |