K4B4G1646D-BPH90 vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of K4B4G1646D-BPH90 by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BPH90 | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $6.36 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | — |
| Organization | 32M x 16 | — |
| Number of Banks | 8 | — |
| Data Rate | 2133 Mb/s per pin | — |
| Supply Voltage | 1.35V (DDR3L) | 1.35 V |
| Package | 96FBGA | 96-FBGA (9x14 mm) |
| Operating Temperature | 0°C to +85°C | [DATA_NEEDED: operating temperature range] |
| CAS Latency | Programmable up to 14 | 11 |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Data Bus Width | — | 16 bit |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 13.75 ns |
| Number of Pins | — | 96 |
| Mounting Type | — | Surface Mount |
| RoHS Status | — | Compliant |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |