K4B4G1646D-BPH90 vs MT41K256M16HA-125 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BPH90 sa pamamagitan ng Samsung Electronics at MT41K256M16HA-125 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ NakahandaMicron Technology
MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BPH90 | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $6.36 |
| Uri ng Memory | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | — |
| Organisasyon | 32M x 16 | — |
| Number of Banks | 8 | — |
| Rate ng Data | 2133 Mb/s per pin | — |
| Volte ng Pagbibigay | 1.35V (DDR3L) | 1.35 V |
| Packhaging | 96FBGA | 96-FBGA (9x14 mm) |
| Temperature na Operasyon | 0°C to +85°C | [DATA_NEEDED: operating temperature range] |
| Latensya ng CAS | Programmable up to 14 | 11 |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | — |
| RoHS Compliant | Yes | — |
| Laki ng Memory | — | 4Gbit (256M x 16) |
| Width ng Data Bus | — | 16 bit |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 13.75 ns |
| Bilang ng Pins | — | 96 |
| Uri ng Pagpapasok | — | Surface Mount |
| Tindminan RoHS | — | Compliant |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |