K4B4G1646D-BYH9 vs MT41K256M16RE-125:D Comparison
Detailed side-by-side comparison of K4B4G1646D-BYH9 by Samsung Electronics and MT41K256M16RE-125:D by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ ActiveMicron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYH9 | MT41K256M16RE-125:D |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $4.19 |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1333 Mbps | 1600 MT/s |
| Supply Voltage | 1.35 V | 1.35 V |
| Operating Temperature | 0 ~ 85 °C | 0C to +95C (TC) |
| Package | 96FBGA | FBGA-96 (9x14 mm) |
| Number of Banks | 8 | — |
| CAS Latency | Programmable | 11 |
| Write Latency | Programmable | — |
| On-Die Termination | Yes | Yes |
| Internal Calibration | Yes | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Memory Type | — | DDR3L SDRAM |
| RoHS | — | Compliant |
| Burst Length | — | 8, 4 |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| Ball Pitch | — | 0.8 mm |