K4B4G1646D-BYH9 vs W634GU6RB09I Comparison
Detailed side-by-side comparison of K4B4G1646D-BYH9 by Samsung Electronics and W634GU6RB09I by Winbond. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYH9 | W634GU6RB09I |
|---|---|---|
| Brand | Samsung Electronics | Winbond |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $6.00 |
| Density | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1333 Mbps | — |
| Supply Voltage | 1.35 V | 1.35 V |
| Operating Temperature | 0 ~ 85 °C | -40C to +95C |
| Package | 96FBGA | 96-VFBGA (7.5x13 mm) |
| Number of Banks | 8 | — |
| CAS Latency | Programmable | 20 ns |
| Write Latency | Programmable | — |
| On-Die Termination | Yes | — |
| Internal Calibration | Yes | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Memory Type | — | DDR3L SDRAM |
| Memory Size | — | 4Gbit (256M x 16) |
| Data Bus Width | — | 16 bit |
| Clock Frequency | — | 1.067 GHz |
| Mounting Type | — | Surface Mount |
| RoHS Status | — | Compliant |
| Interface | — | Parallel |
| Access Time | — | 20 ns |
| Voltage - I/O | — | 1.35 V |